K.N.Toosi U. of Tech.

 
Ebrahim Nadimi
Associate Professor

Office:

#206, 2th Floor

Professors Bldg.,

Faculty of Electrical and Computer Engineering,

K.N. Toosi University of Technology,

Seyed-Khandan Bridge, Tehran 14317-14191, Iran.

P.O.BOX: 16315-1355 Tehran, Iran.

Phone Number: +98 (21) -84062403
FAX Number: 21-8462066
E-mail Address: nadimi@eetd.kntu.ac.ir
 Publications
   
 

  E. Nadimi, M. Schreiber, "The influence of lanthanum doping on the band alignment in Si/SiO2/HfO2 gate stack of nano-MOSFETs: A first principles investigation," Physics Status Solidi B: Basic Research, vol. 254, pp. 1700147, 2017

 

   M. N. Rezaie, N. Manavizadeh, E. Nadimi and F. A. Boroumand, "Quality enhancement of AZO thin films at various thicknesses by introducing ITO buffer layer," Journal of Materials Science: Materials in Electronics, vol. 28, pp. 9328-9337, 2017.

 

   M. Sadeghian Lemraski and E. Nadimi, "Acetone gas sensing mechanism on zinc oxide surfaces: A first principles calculation," Surface Science, vol. 657, pp. 96-103, 2017.

 

   M. N. Rezaie, N. Manavizadeh, E. M. N. Abadi, E. Nadimi and F. A. Boroumand, "Comparison study of transparent RF-sputtered ITO/AZO and ITO/ZnO bilayers for near UV-OLED applications," Applied Surface Science, vol. 392, pp. 549-556, 2017.

 

    R. Leitsmann, F. Lazarevic, E. Nadimi, R. Ottking, P. Planitz, and E. Erben, "Charge transition levels of oxygen, lanthanum, and fluorine related defect structures in bulk hafnium dioxide (HfO2): An ab initio investigation," Journal of Applied, vol. 117, pp. 244503, 2015.

 
    R. Ottking, S. Kupke, E. Nadimi, R. Leitsmann, F. Lazarevic, P. Planitz, G. Roll, S. Slesazeck, M. Trentzsch, T. Mikolajick, "Defect generation and activation processes in HfO2 thin films: Contributions to stress-induced leakage currents," Physica Status Solidi A: Applications and Materials Science, vol. 212, pp. 547-553, 2015.
 

    E. Nadimi, G. Roll, S. Kupke, R. Ottking, P. Pla╠łnitz, C. Radehaus, M. Schreiber, R. Agaiby, M. Trentzsch, S. Knebel, S. Slesazeck, T. Mikolajick, T., "The Degradation Process of High-k SiO2/HfO2 Gate Stacks: A Combined Experimental and First Principles Investigation," IEEE Trans. on Electron Devices, vol. 61, pp. 1278-1283, 2014.

   
 

   E. Nadimi, M. Schreiber, R. Ottking, P. Planitz, C. Radehaus, M. Trentzsch, T. Kelwing, and R. Carter, "Interaction of oxygen vacancies and lanthanum in Hf-based high-k dielectrics: an ab initio investigation," Journal of Phys.: Condens. Matter, vol 23, pp. 365502, 2011.

 
 

   E. Nadimi, P. Planitz, R. Ottking, M. Schreiber and C. Radehaus, "Single and multiple oxygen vacancies in ultrathin SiO2 gate dielectric and their influence on the leakage current: an ab initio investigation," IEEE Electron Device Letters, vol. 31, pp. 881-883, 2010.

 

 

   E. Nadimi, P. Planitz, R. Ottking, and C. Radehaus, "First principle calculation of leakage current through SiO2 and SiOxNy gate dielectrics in MOSFETs," IEEE Trans. on Electron Devices, vol. 57, pp. 690-695, 2010.

 

 

   A. Abbasi, E. Nadimi, P. Planitz, and C. Radehaus, "Density functional study of the adsorption of Aspirin on the hydroxylated (001) α-quartz surface," Surf. Sci., vol. 603, pp. 2502-2506, 2009.

 

 

   E. Nadimi, C. Golz, M. Trentzsch, L. Herrman, K. Wieczorek and C. Radehaus, "Tunneling effective mass of electrons in lightly N-doped SiOxNy gate insulators," IEEE Trans. on Electron Devices, vol. 55, pp. 2462-2468, 2008.

 

  E. Nakhmedov, E. Nadimi, M Bouhassoune, C. Radehaus and K. Wieczorek "First-Principle calculation of the band gap of HfxSi1-xO2 and ZrxSi1-xO2 alloys," Phys. Rev. B, vol. 75, pp. (115204)1-8, 2007.

 

 

  E. Nadimi, C. Radehaus, E. Nakhmedov, K. Wieczorek, "Simulation of the direct tunneling current in Metal-Oxide-Semiconductor capacitor with half-opened boundaries," J. Appl. Phys., vol. 99, pp. (104501)1-7, 2006.

 
 
 

 A. S. Kordbacheh, A. Kia and E. Nadimi, "Current Modulation in a h-BN/Graphene Nanopore Device by Translocation of DNA Nucleotides," to be submitted to 13th IEEE Biomedical Circuits and Systems Conference, BioCAS 2017, Turin-Italy.