Office:

Office:

#206, 2th Floor

Professors Bldg.,

Faculty of Electrical and Computer Engineering,

K.N. Toosi University of Technology,

Seyed-Khandan Bridge, Tehran 14317-14191, Iran

**P.O.BOX:**16315-1355 Tehran, Iran.

**Phone Number:**+98 (21) -84062403

**FAX Number:**21-8462066

**E-mail Address:**nadimi@eetd.kntu.ac.ir

**E. Nadimi**, M. Schreiber, "*The influence of lanthanum doping on the band alignment in Si/SiO _{2}/HfO_{2} gate stack of nano-MOSFETs: A first principles investigation,*" Physics Status Solidi B: Basic Research, vol. 254, pp. 1700147, 2017

M. N. Rezaie, N. Manavizadeh, **E. Nadimi** and F. A. Boroumand, "*Quality enhancement of AZO thin films at various thicknesses by introducing ITO buffer layer,*" Journal of Materials Science: Materials in Electronics, vol. 28, pp. 9328-9337, 2017.

M. Sadeghian Lemraski and **E. Nadimi**, "*Acetone gas sensing mechanism on zinc oxide surfaces: A first principles calculation,*" Surface Science, vol. 657, pp. 96-103, 2017.

M. N. Rezaie, N. Manavizadeh, E. M. N. Abadi, **E. Nadimi** and F. A. Boroumand, "*Comparison study of transparent RF-sputtered ITO/AZO and ITO/ZnO bilayers for near UV-OLED applications,*" Applied Surface Science, vol. 392, pp. 549-556, 2017.

R. Leitsmann, F. Lazarevic, **E. Nadimi**, R. Ottking, P. Planitz, and E. Erben, "*Charge transition levels of oxygen, lanthanum, and fluorine related defect structures in bulk hafnium dioxide (HfO _{2}): An ab initio investigation,"* Journal of Applied, vol. 117, pp. 244503, 2015.

**E. Nadimi**, R. Leitsmann, F. Lazarevic, P. Planitz, G. Roll, S. Slesazeck, M. Trentzsch, T. Mikolajick, "

*Defect generation and activation processes in HfO*Physica Status Solidi A: Applications and Materials Science, vol. 212, pp. 547-553, 2015.

_{2}thin films: Contributions to stress-induced leakage currents," **E. Nadimi**, G. Roll, S. Kupke, R. Ottking, P. Plänitz, C. Radehaus, M. Schreiber, R. Agaiby, M. Trentzsch, S. Knebel, S. Slesazeck, T. Mikolajick, T., "*The Degradation Process of High-k SiO _{2}/HfO_{2} Gate Stacks: A Combined Experimental and First Principles Investigation,"* IEEE Trans. on Electron Devices, vol. 61, pp. 1278-1283, 2014.

**E. Nadimi**, M. Schreiber, R. Ottking, P. Planitz, C. Radehaus, M. Trentzsch, T. Kelwing, and R. Carter, "*Interaction of oxygen vacancies and lanthanum in Hf-based high-k dielectrics: an ab initio investigation,"* Journal of Phys.: Condens. Matter, vol 23, pp. 365502, 2011.

**E. Nadimi**, P. Planitz, R. Ottking, M. Schreiber and C. Radehaus, "*Single and multiple oxygen vacancies in ultrathin SiO _{2} gate dielectric and their influence on the leakage current: an ab initio investigation,"* IEEE Electron Device Letters, vol. 31, pp. 881-883, 2010.

**E. Nadimi**, P. Planitz, R. Ottking, and C. Radehaus, "*First principle calculation of leakage current through SiO _{2} and SiO_{x}N_{y} gate dielectrics in MOSFETs,"* IEEE Trans. on Electron Devices, vol. 57, pp. 690-695, 2010.

A. Abbasi, **E. Nadimi**, P. Planitz, and C. Radehaus, "*Density functional study of the adsorption of Aspirin on the hydroxylated (001) α-quartz surface,*" Surf. Sci., vol. 603, pp. 2502-2506, 2009.

**E. Nadimi**, C. Golz, M. Trentzsch, L. Herrman, K. Wieczorek and C. Radehaus, "*Tunneling effective mass of electrons in lightly N-doped SiO _{x}N_{y} gate insulators,"* IEEE Trans. on Electron Devices, vol

*.*55, pp. 2462-2468, 2008.

E. Nakhmedov, **E. Nadimi**, M Bouhassoune, C. Radehaus and K. Wieczorek "*First-Principle calculation of the band gap of Hf _{x}Si_{1-x}O_{2} and Zr_{x}Si_{1-x}O_{2} alloys," *Phys. Rev. B, vol. 75, pp. (115204)1-8, 2007.

**E. Nadimi**, C. Radehaus, E. Nakhmedov, K. Wieczorek, "*Simulation of the direct tunneling current in Metal-Oxide-Semiconductor capacitor with half-opened boundaries,"* J. Appl. Phys., vol. 99, pp. (104501)1-7, 2006.

A. S. Kordbacheh, A. Kia and **E. Nadimi**, * "Current Modulation in a h-BN/Graphene Nanopore Device by Translocation of DNA Nucleotides,*" to be submitted to 13^{th} IEEE Biomedical Circuits and Systems Conference, BioCAS 2017, Turin-Italy.